articleTop 10% cited
Radiation effects and hardening of MOS technology: devices and circuits
IEEE Transactions on Nuclear Science · 2003 · Vol. 50(3) · pp. 500–521
H.L. Hughes✉(United States Naval Research Laboratory)J.M. Benedetto(United States Naval Research Laboratory)
Abstract
Total ionizing dose radiation effects on the electrical properties of metal-oxide-semiconductor devices and integrated circuits are complex in nature and have changed much during decades of device evolution. These effects are caused by radiation-induced charge buildup in oxide and interfacial regions. This paper presents an overview of these radiation-induced effects, their dependencies, and the many different approaches to their mitigation.
Semiconductor materials and devicesRadiation Effects in ElectronicsIntegrated Circuits and Semiconductor Failure AnalysisRadiation hardeningRadiationElectronic circuitMaterials scienceIonizing radiationOptoelectronicsIntegrated circuitSemiconductor deviceOxideRadiation tolerance
Citations
314
FWCI
6.00
field-weighted impact
References
415
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97%
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Cited by
Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices
IEEE Transactions on Nuclear Science · 2013 · 357 citations
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