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Physical Mechanisms Contributing to Device "Rebound"
IEEE Transactions on Nuclear Science · 1984 · Vol. 31(6) · pp. 1434–1438
J.R. Schwank✉(Sandia National Laboratories California)P.S. Winokur(Sandia National Laboratories California)P. J. McWhorter(Sandia National Laboratories California)F.W. Sexton(Sandia National Laboratories California)P. V. Dressendorfer(Sandia National Laboratories)D. C. Turpin(Sandia National Laboratories California)
Abstract
The physical mechanisms that produce rebound have been identified. The positive increase in threshold voltage during a bias anneal is due to annealing of oxide trapped charge. Rebound can be predicted by measuring the contribution to the threshold voltage from radiation-induced interface states immediately after irradiation.
Semiconductor materials and devicesIntegrated Circuits and Semiconductor Failure AnalysisAdvanced Memory and Neural ComputingThreshold voltageAnnealing (glass)Materials scienceOptoelectronicsVoltageIrradiationRadiationNegative-bias temperature instabilityOxideElectrical engineering
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References
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