articleTop 1% cited
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Nature Materials · 2011 · Vol. 10(8) · pp. 625–630
Myoung‐Jae Lee✉(Samsung (South Korea))Chang Bum Lee(Samsung (South Korea))Dongsoo Lee(Samsung (South Korea))Seung Ryul Lee(Samsung (South Korea))Man Chang(Samsung (South Korea))Ji Hyun Hur(Samsung (South Korea))Young‐Bae Kim(Samsung (South Korea))Changjung Kim(Samsung (South Korea))David H. Seo(Samsung (South Korea))Sunae Seo(Sejong University)U‐In Chung(Samsung (South Korea))In-Kyeong Yoo(Samsung (South Korea))Kinam Kim(Samsung (South Korea))
Advanced Memory and Neural ComputingSemiconductor materials and devicesFerroelectric and Negative Capacitance DevicesCommutationCrossbar switchNon-volatile memoryComputer scienceTransistorMemristorScalabilityMaterials scienceSchottky diodePower consumption
Funding
- Samsung Advanced Institute of Technology
- Kyung Hee University
Citations
2,172
FWCI
122.40
field-weighted impact
References
29
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100%
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Citations per year
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References
Memristive switching mechanism for metal/oxide/metal nanodevices
Nature Nanotechnology · 2008 · 2,920 citations
Ferroelectric thin films: Review of materials, properties, and applications
Journal of Applied Physics · 2006 · 1,858 citations
The missing memristor found
Nature · 2008 · 11,249 citations
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Nature Nanotechnology · 2010 · 2,067 citations
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