articleTop 1% cited
Memristive switching mechanism for metal/oxide/metal nanodevices
Nature Nanotechnology · 2008 · Vol. 3(7) · pp. 429–433
J. Joshua Yang✉(Hewlett-Packard (United States))Matthew D. Pickett(Hewlett-Packard (United States))Xuema Li(Hewlett-Packard (United States))Douglas A. A. Ohlberg(Hewlett-Packard (United States))Duncan R. Stewart(Hewlett-Packard (United States))R. Stanley Williams(Hewlett-Packard (United States))
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural EngineeringMemristorMaterials scienceNon-volatile memoryResistive random-access memoryOxideNanotechnologyNanoscopic scalePolarity (international relations)OptoelectronicsResistor
MeSH terms
Computer SimulationEquipment DesignMetalsModels, ChemicalOxidesSignal Processing, Computer-AssistedInformation Storage and RetrievalElectric ImpedanceEquipment Failure AnalysisNanotechnology
Citations
2,920
FWCI
155.68
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References
Nanoionics-based resistive switching memories
Nature Materials · 2007 · 4,759 citations
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Nature · 2008 · 11,249 citations
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