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Sub-nanosecond switching of a tantalum oxide memristor

Nanotechnology · 2011 · Vol. 22(48) · pp. 485203–485203

Antonio C. Torrezan✉(Hewlett-Packard (United States))John Paul Strachan(Hewlett-Packard (United States))G. Medeiros‐Ribeiro(Hewlett-Packard (United States))R. Stanley Williams(Hewlett-Packard (United States))

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Abstract

We report sub-nanosecond switching of a metal-oxide-metal memristor utilizing a broadband 20 GHz experimental setup developed to observe fast switching dynamics. Set and reset operations were successfully performed in the tantalum oxide memristor using pulses with durations of 105 and 120 ps, respectively. Reproducibility of the sub-nanosecond switching was also confirmed as the device switched over consecutive cycles.

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Neuroscience and Neural EngineeringMemristorNanosecondMaterials scienceReset (finance)OxideTantalumReproducibilityMicrosystemSwitching timeOptoelectronics

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