articleTop 1% cited

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

Nature Nanotechnology · 2010 · Vol. 5(2) · pp. 148–153

Deok‐Hwang Kwon✉(Seoul National University)Kyung Min Kim(Seoul National University)Jae Hyuck Jang(Seoul National University)Jong Myeong Jeon(Seoul National University)Min Hwan Lee(Seoul National University)Gun Hwan Kim(Seoul National University)Xiang‐Shu Li(Samsung (South Korea))Gyeong‐Su Park(Samsung (South Korea))Bora Lee(Ewha Womans University)Seungwu Han(Seoul National University)Miyoung Kim(Seoul National University)Cheol Seong Hwang(Seoul National University)

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Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Electronic and Structural Properties of OxidesMaterials scienceConductivityOxideNanotechnologyTransmission electron microscopyThin filmResistive random-access memoryOptoelectronicsChemical physicsLimiting

MeSH terms

CrystallizationElectric ConductivityElectrochemistryFourier AnalysisOxidesSurface PropertiesTitaniumNanotechnologyMicroscopy, Electron, TransmissionNanostructures

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