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Metal–Oxide RRAM

Proceedings of the IEEE · 2012 · Vol. 100(6) · pp. 1951–1970

H.-S. Philip Wong✉(Stanford University)Heng-Yuan Lee(Industrial Technology Research Institute)Shimeng Yu(Stanford University)Yu-Sheng Chen(National Tsing Hua University)Yi Wu(Stanford University)Pang-Shiu Chen(Industrial Technology Research Institute)Byoungil Lee(Stanford University)Frederick T. Chen(Industrial Technology Research Institute)Ming‐Jinn Tsai(Industrial Technology Research Institute)

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Abstract

In this paper, recent progress of binary metal–oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal–oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Transition Metal Oxide NanomaterialsResistive random-access memoryOxideMaterials scienceNon-volatile memoryData retentionScalingNanotechnologyMetalOptoelectronicsEngineering physics

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