articleTop 1% cited
Shortest wavelength semiconductor laser diode
Electronics Letters · 1996 · Vol. 32(12) · pp. 1105–1106
Isamu Akasaki✉(Meijo University)S. Sota(Meijo University)Hiroshi Sakai(Meijo University)Toshiyuki Tanaka(Pioneer (Japan))Masayoshi Koike(Toyoda Gosei (Japan))Hiroshi Amano(Meijo University)
Abstract
A group III, nitride based, separate confinement heterostructure (SCH) single quantum well (SQW) structure, with an active layer thickness as small as 1.5 nm, was fabricated. It shows the shortest lasing from semiconductor lasers by current injection at room temperature to date. Line width is as little as 0.15 nm.
Semiconductor Quantum Structures and DevicesGaN-based semiconductor devices and materialsSemiconductor Lasers and Optical DevicesOptoelectronicsLasing thresholdSemiconductor laser theoryMaterials scienceLaserQuantum wellSemiconductorDiodeHeterojunctionQuantum dot laser
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References
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Japanese Journal of Applied Physics · 1991 · 432 citations
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Applied Physics Letters · 1986 · 2,166 citations
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Japanese Journal of Applied Physics · 1996 · 2,483 citations
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
Applied Physics Letters · 1994 · 3,754 citations
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
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