articleTop 10% cited
Intrinsic limitations to the doping of wide-gap semiconductors
Physica B Condensed Matter · 2001 · Vol. 302-303 · pp. 123–134
W. Walukiewicz✉(Lawrence Berkeley National Laboratory)
Semiconductor materials and devicesSemiconductor materials and interfacesSemiconductor Quantum Structures and DevicesSemiconductorDopingIntrinsic semiconductorCondensed matter physicsMaterials scienceBand gapElectronSaturation (graph theory)Fermi levelFree electron model
Citations
366
FWCI
10.45
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65
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99%
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References
Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
Japanese Journal of Applied Physics · 1992 · 767 citations
Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
Japanese Journal of Applied Physics · 1997 · 656 citations
Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
Japanese Journal of Applied Physics · 1991 · 432 citations
Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO
Japanese Journal of Applied Physics · 1999 · 576 citations
Shortest wavelength semiconductor laser diode
Electronics Letters · 1996 · 462 citations
p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping
Japanese Journal of Applied Physics · 1999 · 567 citations
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