High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Abstract

High-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum well structures based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates. The typical green LEDs had a peak wavelength of 525 nm and full width at half-maximum (FWHM) of 45 nm. The output power, the external quantum efficiency and the luminous intensity of green LEDs at a forward current of 20 mA were 1 mW, 2.1% and 4 cd, respectively. The luminous intensity of green LEDs (4 cd) was about 40 times higher than that of conventional green GaP LEDs (0.1 cd). Typical yellow LEDs had a peak wavelength of 590 nm and FWHM of 90 nm. The output power of yellow LEDs was 0.5 mW at 20 mA. When the emission wavelength of III-V nitride LEDs with quantum well structures increased from the region of blue to yellow, the output power decreased dramatically.