articleTop 10% cited
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Applied Physics Letters · 1986 · Vol. 48(5) · pp. 353–355
Hiroshi Amano✉(Nagoya University)Nobuhiko Sawaki(Nagoya University)Isamu Akasaki(Nagoya University)Yoshihiko Toyoda(Panasonic (Japan))
Abstract
Atmospheric pressure metalorganic vapor phase epitaxial growth and characterization of high quality GaN on sapphire (0001) substrates are reported. Using AlN buffer layers, GaN thin films with optically flat surfaces free from cracks are successfully grown. The narrowest x-ray rocking curve from the (0006) plane is 2.70′ and from the (202̄4) plane is 1.86′. Photoluminescence spectra show strong near band edge emission. The growth condition dependence of crystalline quality is also studied.
GaN-based semiconductor devices and materialsPlasma Diagnostics and ApplicationsSemiconductor Quantum Structures and DevicesEpitaxySapphirePhotoluminescenceMaterials scienceMetalorganic vapour phase epitaxyLayer (electronics)OptoelectronicsChemical vapor depositionWide-bandgap semiconductorThin film
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References
Mechanism of Yellow Luminescence in GaN
Japanese Journal of Applied Physics · 1980 · 680 citations
THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN
Applied Physics Letters · 1969 · 1,308 citations
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