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Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

Japanese Journal of Applied Physics · 1997 · Vol. 36(4A) · pp. L382–L382

Tetsuya Takeuchi✉(Meijo University)Shigetoshi Sota(Meijo University)Maki Katsuragawa(Meijo University)Miho Komori(Meijo University)Hideo Takeuchi(Meijo University)Hiroshi Amano(Meijo University)Isamu Akasaki Isamu Akasaki(Meijo University)

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Abstract

We have studied the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells. Our calculation suggests that an electric field of 1.08 MV/cm is induced by the piezoelectric effect in strained Ga 0.87 In 0.13 N grown on GaN. The photoluminescence peak energy of the Ga 0.87 In 0.13 N strained quantum wells showed blue shift with increasing excitation intensity. Moreover, the well-width dependence of its luminescence peak energy was well explained when the piezoelectric fields were taken into account. These results clearly showed that the piezoelectric field induced the quantum-confined Stark effect.

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Acoustic Wave Resonator TechnologiesPiezoelectricityQuantum-confined Stark effectQuantum wellPhotoluminescenceStark effectElectric fieldLuminescenceBlueshiftCondensed matter physicsExcitation

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