article
Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
Journal of Crystal Growth · 1991 · Vol. 115(1-4) · pp. 628–633
K. Hiramatsu✉(Nagoya University)Shintaro Itoh(Nagoya University)Hiroshi Amano(Nagoya University)Isamu Akasaki(Nagoya University)N. Kuwano(Kyushu University)T. Shiraishi(Kyushu University)K. Oki(Kyushu University)
GaN-based semiconductor devices and materialsZnO doping and propertiesGa2O3 and related materialsMetalorganic vapour phase epitaxySapphireLayer (electronics)Materials scienceNucleationTransmission electron microscopyBuffer (optical fiber)Substrate (aquarium)OptoelectronicsCrystallography
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296
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1.10
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5
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75%
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Cited by
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References
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Applied Physics Letters · 1986 · 2,166 citations
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
Journal of Crystal Growth · 1989 · 687 citations
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