articleTop 1% cited
AlGaN/GaN HEMTs-an overview of device operation and applications
Proceedings of the IEEE · 2002 · Vol. 90(6) · pp. 1022–1031
Abstract
Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.
GaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignSilicon Carbide Semiconductor TechnologiesTransistorMaterials scienceEngineering physicsSemiconductorPower semiconductor devicePower electronicsWide-bandgap semiconductorMicrowaveElectronicsGallium nitride
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References
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Applied Physics Letters · 1986 · 2,166 citations
Very-high power density AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices · 2001 · 552 citations
GaN: Processing, defects, and devices
Journal of Applied Physics · 1999 · 1,784 citations
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
IEEE Transactions on Electron Devices · 2001 · 1,401 citations
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Journal of Applied Physics · 1999 · 2,891 citations
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