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III–Nitride UV Devices

Japanese Journal of Applied Physics · 2005 · Vol. 44(10R) · pp. 7191–7191
M. Asif KhanM. ShatalovH. P. MaruskaH. M. WangE. Kuokštis

Abstract

The need for efficient, compact and robust solid-state UV optical sources and sensors had stimulated the development of optical devices based on III–nitride material system. Rapid progress in material growth, device fabrication and packaging enabled demonstration of high efficiency visible-blind and solar-blind photodetectors, deep-UV light-emitting diodes with emission from 400 to 250 nm, and UV laser diodes with operation wavelengths ranging from 340 to 350 nm. Applications of these UV optical devices include flame sensing; fluorescence-based biochemical sensing; covert communications; air, water and food purification and disinfection; and biomedical instrumentation. This paper provides a review of recent advances in the development of UV optical devices. Performance of state-of-the-art devices as well as future prospects and challenges are discussed.

GaN-based semiconductor devices and materialsGas Sensing Nanomaterials and SensorsPhotocathodes and Microchannel PlatesMaterials scienceOptoelectronicsFabricationPhotodetectorLight-emitting diodeLaserDiodeUltravioletNanotechnologyOptics
Citations
419
FWCI
22.91
field-weighted impact
References
214
Percentile
100%
vs. same field & year
Citations per year
References
P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
Japanese Journal of Applied Physics · 1993 · 582 citations
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Japanese Journal of Applied Physics · 1996 · 2,483 citations
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