reviewTop 1% cited
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Advanced Materials · 2009 · Vol. 21(25-26) · pp. 2632–2663
Rainer Waser✉(RWTH Aachen University)Regina Dittmann(Jülich Aachen Research Alliance)G. Staikov(Jülich Aachen Research Alliance)K. Szot(Forschungszentrum Jülich)
Abstract
This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined..
Advanced Memory and Neural ComputingElectrochemical Analysis and ApplicationsTransition Metal Oxide NanomaterialsMaterials scienceNanotechnologyMechanism (biology)ScalingValence (chemistry)Resistive random-access memoryElectrochemistryResistive touchscreenRedoxNon-volatile memory
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