Comparison of 6H-SiC, 3C-SiC, and Si for power devices

Abstract

The drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined. Using these values, the output characteristics of the devices are calculated and compared with those of Si devices. It is found that due to very low drift region resistance, 5000-V SiC Schottky rectifiers and power MOSFETs can deliver on-state current density of 100 A/cm/sup 2/ at room temperature with a forward drop of only 3.85 and 2.95 V, respectively. Both devices are expected to have excellent switching characteristics and ruggedness due to the absence of minority-carrier injection. A thermal analysis shows that 5000-V, 6H-, and 3C-SiC MOSFETs and Schottky rectifiers would be approximately 20 and 18 times smaller than corresponding Si devices, and that operation at higher temperatures and at higher breakdown voltages than conventional Si devices is possible. Also, a significant reduction in the die size is expected.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>