Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon Carbide Semiconductor Technologies
This cluster of papers explores advancements in power electronics technology, focusing on wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), reliability of power devices, high-temperature electronics, IGBT modules, thermal management, and failure modes. The papers cover topics such as the performance evaluation of SiC and GaN power devices, material science and device physics in SiC technology, condition monitoring for device reliability, and the potential of SiC nanowires in power electronics.
76.5K works worldwide776.1K citations
Wide Bandgap SemiconductorsReliabilitySilicon CarbidePower DevicesHigh-Temperature ElectronicsIGBT ModulesGaN Power DevicesThermal ManagementFailure ModesSiC Nanowires
Journals publishing in this area
1
364h-index
4.37Impact
24.7KArticles
1.2MCitations
2
274h-index
2.68Impact
32.7KArticles
807.8KCitations
3
386h-index
3.82Impact
21.7KArticles
1.4MCitations
4
280h-index
3.20Impact
17.5KArticles
665.7KCitations
5
248h-index
3.12Impact
12.4KArticles
541.1KCitations
6
International Journal of Research in Circuits Devices and Systems
ISSN 2708-45312 articles in this topic
1h-index
0.07Impact
61Articles
4Citations
7
1h-index
0.05Impact
42Articles
2Citations
8
International Journal of Research in Advanced Electronics Engineering
ISSN 2708-45581 articles in this topic
1h-index
0.16Impact
48Articles
7Citations
9
1h-index
0.02Impact
63Articles
6Citations
10
1h-index
0.11Impact
40Articles
4Citations