articleTop 10% cited

Wide bandgap compound semiconductors for superior high-voltage unipolar power devices

IEEE Transactions on Electron Devices · 1994 · Vol. 41(8) · pp. 1481–1483

T. Paul Chow✉(Rensselaer Polytechnic Institute)R. Tyagi(Rensselaer Polytechnic Institute)

Abstract

This paper presents a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices. Seven different figures of merit have been analyzed. Theoretical calculations show that besides diamond and SiC, compounds like AlN, GaN, InN, and ZnO, and the intermetallics (Ga/sub x/In/sub 1-x/N, Al/sub x/In/sub 1-x/N, Al/sub x/Ga/sub 1-x/N, and (AlN)/sub x/(SiC)/sub 1-x/) offer several orders of magnitude improvement in the on-resistance and in the potential for successful operation at higher temperatures.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

Silicon Carbide Semiconductor Technologies Semiconductor materials and devices GaN-based semiconductor devices and materialsBand gapMaterials scienceSemiconductorWide-bandgap semiconductorCompound semiconductorOptoelectronicsDiamondFigure of meritIntermetallicNanotechnology

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480

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9.51

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99%

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Cited by

GaN: Processing, defects, and devices

Journal of Applied Physics · 1999 · 1,784 citations

References

Optimum semiconductors for high-power electronics

IEEE Transactions on Electron Devices · 1989 · 606 citations

Comparison of 6H-SiC, 3C-SiC, and Si for power devices

IEEE Transactions on Electron Devices · 1993 · 1,102 citations

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