articleTop 1% cited
Status and prospects for SiC power MOSFETs
IEEE Transactions on Electron Devices · 2002 · Vol. 49(4) · pp. 658–664
James A. Cooper✉(Purdue University West Lafayette)M. R. Melloch(Purdue University West Lafayette)Ranbir Singh(Durham University)Anant Agarwal(Wolfspeed, Inc. (United States))John W. Palmour(Wolfspeed, Inc. (United States))
Abstract
SiC electronic device technology has made rapid progress during the past decade. In this paper, we review the evolution of SiC power MOSFETs between 1992 and the present, discuss the current status of device development, identify the critical fabrication issues, and assess the prospects for continued progress and eventual commercialization.
Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesMultilevel Inverters and ConvertersCommercializationMOSFETEngineering physicsPower semiconductor deviceSilicon carbideFabricationPower MOSFETMaterials scienceElectrical engineeringEngineering
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Material science and device physics in SiC technology for high-voltage power devices
Japanese Journal of Applied Physics · 2015 · 1,090 citations
References
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
IEEE Transactions on Electron Devices · 1993 · 1,102 citations
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