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Very-high power density AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices · 2001 · Vol. 48(3) · pp. 586–590

Yifeng Wu✉D. Kapolnek(Ericsson (United States))J. P. IbbetsonP. ParikhB.P. KellerUmesh K. Mishra(University of California, Santa Barbara)

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Abstract

Research work focusing on the enhancement of large-signal current-voltage (I-V) capabilities has resulted in significant performance improvement for AlGaN/GaN HEMT's. 100-150 /spl mu/m wide devices grown on SiC substrates demonstrated a record power density of 9.8 W/mm at 8 GHz, which is about ten times higher than GaAs-based FETs; similar devices grown on sapphire substrates showed 6.5 W/mm, which was thermally limited, 2-mm-wide devices flip-chip mounted on to AlN substrates produced 9.2-9.8 W output power at 8 GHz with 44-47% PAE. A flip-chip amplifier IC using a 4-mm device generated 14 W at 8 GHz, representing the highest CW power obtained from GaN-based integrated circuits to date.

GaN-based semiconductor devices and materials Radio Frequency Integrated Circuit Design Semiconductor Quantum Structures and DevicesMaterials scienceHigh-electron-mobility transistorOptoelectronicsSapphireAmplifierFlip chipGallium nitrideChipWide-bandgap semiconductorPower density

Funding

California Institute of Technology
University of California, Santa Barbara

Citations

552

FWCI

27.10

field-weighted impact

References

Percentile

100%

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Citations per year

Cited by

AlGaN/GaN HEMTs-an overview of device operation and applications

Proceedings of the IEEE · 2002 · 2,181 citations

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