article Open AccessTop 10% cited
Total ionizing dose effects in MOS oxides and devices
IEEE Transactions on Nuclear Science · 2003 · Vol. 50(3) · pp. 483–499
Timothy R. Oldham✉(Goddard Space Flight Center)F. B. McLean(Office of Ocean Exploration and Research)
Abstract
This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.
Semiconductor materials and devicesRadiation Effects in ElectronicsAdvancements in Semiconductor Devices and Circuit DesignIonizing radiationTrappingMaterials scienceOptoelectronicsAbsorbed doseIrradiationRadiationMOSFETPhysicsVoltage
Citations
905
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6.36
field-weighted impact
References
155
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97%
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IEEE Transactions on Nuclear Science · 1984 · 358 citations
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