Measuring disorder in graphene with the G and D bands

Abstract

Abstract Here we analyse the evolution of the disorder induced D‐band (∼1350 cm −1 ) and of the first‐order allowed G‐band (∼1584 cm −1 ) in the Raman spectra of ion bombarded graphene. By increasing the bombardment time, we increase the disorder and, consequently, decrease the average distance ( L D ) between defects. We describe how the intensity, full width at half maximum (FWHM) and integrated area vary for the D and G bands as a function of L D . Finally, we compare the evolution of the intensity ratio I D / I G and of the integrated area ratio A D / A G between the D and G bands as a method for quantifying disorder in graphene. For practical use and inter‐laboratorial comparison, the authors advise using the intensity ratio for a more suitable measure for analysing defect density.