articleTop 10% cited
Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
Journal of Crystal Growth · 1994 · Vol. 144(3-4) · pp. 133–140
Yoshiki Kato(Nagoya University)Shota Kitamura(Nagoya University)Kazumasa Hiramatsu✉(Nagoya University)Nobuhiko Sawaki(Nagoya University)
GaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and propertiesWurtzite crystal structureEpitaxySapphireFacet (psychology)Vapor phaseMetalorganic vapour phase epitaxyOptoelectronicsMaterials scienceNitridePhase (matter)
Citations
316
FWCI
5.20
field-weighted impact
References
12
Percentile
97%
vs. same field & year
Citations per year
Cited by
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InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
Japanese Journal of Applied Physics · 1997 · 470 citations
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
Journal of Crystal Growth · 2000 · 412 citations
References
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Applied Physics Letters · 1986 · 2,166 citations
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
Journal of Crystal Growth · 1989 · 687 citations
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