articleTop 10% cited
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
Journal of Crystal Growth · 1989 · Vol. 98(1-2) · pp. 209–219
Isamu Akasaki✉(Nagoya University)Hiroshi Amano(Nagoya University)Yasuo Koide(Nagoya University)Kazumasa Hiramatsu(Nagoya University)Nobuhiko Sawaki(Nagoya University)
GaN-based semiconductor devices and materialsZnO doping and propertiesGa2O3 and related materialsCrystalliteMetalorganic vapour phase epitaxyLayer (electronics)Materials scienceSubstrate (aquarium)NucleationSapphireBuffer (optical fiber)CrystallographyEpitaxy
Funding
- Ministry of Education, Culture, Sports, Science and Technology
Citations
687
FWCI
3.68
field-weighted impact
References
6
Percentile
94%
vs. same field & year
Citations per year
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References
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Applied Physics Letters · 1986 · 2,166 citations
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