articleTop 10% cited
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
Journal of Crystal Growth · 2000 · Vol. 221(1-4) · pp. 316–326
Kazumasa Hiramatsu✉(Mie University)K. Nishiyama(Mie University)Masaru Onishi(Mie University)H. Mizutani(Mie University)Mitsuhisa Narukawa(Mie University)Atsushi Motogaito(Mie University)Hideto Miyake(Mie University)Yasushi Iyechika(Sumitomo Chemical (Japan))Takayoshi Maeda(Sumitomo Chemical (Japan))
GaN-based semiconductor devices and materialsMetal and Thin Film MechanicsSemiconductor materials and devicesEpitaxyFacet (psychology)Coalescence (physics)Metalorganic vapour phase epitaxyDislocationMaterials scienceOptoelectronicsFabricationThreading (protein sequence)Optics
Funding
- Japan Society for the Promotion of Science
Citations
412
FWCI
9.73
field-weighted impact
References
32
Percentile
99%
vs. same field & year
Citations per year
Cited by
Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates
IEEE Photonics Technology Letters · 2006 · 241 citations
References
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
Japanese Journal of Applied Physics · 1997 · 470 citations
Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
Journal of Crystal Growth · 1994 · 316 citations
Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
Japanese Journal of Applied Physics · 1997 · 926 citations
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