article

Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

Japanese Journal of Applied Physics · 1992 · Vol. 31(7A) · pp. L853–L853

M. Weyers✉(NTT Basic Research Laboratories)Michio Sato(NTT Basic Research Laboratories)Hiroaki Ando(NTT Basic Research Laboratories)

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Abstract

We present the first report on the optical properties of dilute GaAS 1- x N x alloys (0< x <0.015). The layers have been grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD). The grown layers show a systematic red shift of the band-edge luminescence with increasing N content. The assignement of the photoluminescence to band-edge transitions and not to isolated N-N pair emission is verified by the characteristics of the optical absorption.

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Nanowire Synthesis and ApplicationsPhotoluminescenceMetalorganic vapour phase epitaxyChemical vapor depositionAbsorption (acoustics)Absorption edgeLuminescenceMaterials scienceAlloyAnalytical Chemistry (journal)Red shift

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