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Exponential ionic drift: fast switching and low volatility of thin-film memristors

Applied Physics A · 2008 · Vol. 94(3) · pp. 515–519
Dmitri B. StrukovR. Stanley Williams
Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural EngineeringMemristorExponential functionVolatility (finance)Nonlinear systemSwitching timeMaterials scienceThin filmIonIonic bondingVoltage
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References
Memristive switching mechanism for metal/oxide/metal nanodevices
Nature Nanotechnology · 2008 · 2,920 citations
Nanoionics-based resistive switching memories
Nature Materials · 2007 · 4,759 citations
The missing memristor found
Nature · 2008 · 11,249 citations
Device scaling limits of Si MOSFETs and their application dependencies
Proceedings of the IEEE · 2001 · 1,533 citations
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