articleTop 1% cited
Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates
Thin Solid Films · 2002 · Vol. 413(1-2) · pp. 186–197
Markus D. Groner(University of Colorado Boulder)Jeffrey W. Elam(University of Colorado Boulder)F. Fabreguette(University of Colorado Boulder)Steven M. George✉(University of Colorado Boulder)
Semiconductor materials and devicesCopper Interconnects and ReliabilityElectronic and Structural Properties of OxidesAtomic layer depositionMaterials scienceDielectricAnalytical Chemistry (journal)Thin filmSiliconEllipsometryCapacitanceOxideHigh-κ dielectric
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References
Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence
Surface Science · 1995 · 458 citations
High-κ gate dielectrics: Current status and materials properties considerations
Journal of Applied Physics · 2001 · 5,826 citations
Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry
Thin Solid Films · 1997 · 508 citations
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