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A New Field-Effect Transistor with Selectively Doped GaAs/n-Al<sub>x</sub>Ga<sub>1-x</sub>As Heterojunctions
Japanese Journal of Applied Physics · 1980 · Vol. 19(5) · pp. L225–L225
Takashi Mimura✉(Fujitsu (Japan))S. Hiyamizu(Fujitsu (Japan))Toshio Fujii(Fujitsu (Japan))Kazuo Nanbu(Fujitsu (Japan))
Abstract
Studies of field-effect control of the high mobility electrons in MBE-grown selectively doped GaAs/n-Al x Ga 1- x As heterojunctions are described. Successful fabrication of a new field-effect transistor, called a high electron mobility transistor (HEMT), with extremely high-speed microwave capabilities is reported.
Semiconductor Quantum Structures and DevicesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignHeterojunctionHigh-electron-mobility transistorDopingField-effect transistorTransistorOptoelectronicsMaterials scienceFabricationElectron mobilityField (mathematics)
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767
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References
Electron mobilities in modulation-doped semiconductor heterojunction superlattices
Applied Physics Letters · 1978 · 1,497 citations
Two-dimensional electron gas at a semiconductor-semiconductor interface
Solid State Communications · 1979 · 447 citations
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