Electron mobilities in modulation-doped semiconductor heterojunction superlattices

Abstract

GaAs-AlxGa1−xAs superlattice structures in which electron mobilities exceed those of otherwise equivalent epitaxial GaAs as well as the Brooks-Herring predictions near room temperature and at very low temperatures are reported. This new behavior is achieved via a modulation-doping technique that spatially separates conduction electrons and their parent donor impurity atoms, thereby reducing the influence of ionized and neutral impurity scattering on the electron motion.