Application-specific fast-recovery diodes

Abstract

The number of fast recovery applications in high power systems continues to grow leading to various dynamic constraints and hence different diode designs and behaviours. Along with conventional RC (SCR-type) and C(GTO-type) snubber conditions, snubber less conditions in both IGBT and IGCT applications are gaining ground at ever higher currents and voltages (presently 6 kV). Within these two groups, the further distinctions of inductive and resistive commutation di/dt must be made for an optimal diode design. Diodes capable of high reverse di/dt and dv/dt can today be realised thanks to controlled life-time profiling which will be described here with both measured and simulated results.