article Open AccessTop 1% cited
A comprehensive study on the structural evolution of HfO<sub>2</sub>thin films doped with various dopants
Journal of Materials Chemistry C · 2017 · Vol. 5(19) · pp. 4677–4690
Min Hyuk Park✉(NaMLab (Germany))Tony Schenk(NaMLab (Germany))Chris M. Fancher(Oak Ridge Associated Universities)Everett D. Grimley(North Carolina State University)Chuanzhen Zhou(North Carolina State University)Claudia Richter(NaMLab (Germany))James M. LeBeau(North Carolina State University)Jacob L. Jones(North Carolina State University)Thomas Mikolajick(NaMLab (Germany))Uwe Schroeder(NaMLab (Germany))
Abstract
Quantitative phase analysis is first performed on doped Hafnia films to elucidate the structural origin of unexpected ferroelectricity.
Ferroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase MaterialsHafniaMaterials scienceDopantDopingFerroelectricityThin filmPhase (matter)NanotechnologyOptoelectronicsCeramic
Funding
- Deutsche Forschungsgemeinschaft
- Army Research Office
Citations
333
FWCI
14.13
field-weighted impact
References
89
Percentile
99%
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Citations per year
References
Ferroelectricity in hafnium oxide thin films
Applied Physics Letters · 2011 · 2,609 citations
Correction of intensities for preferred orientation in powder diffractometry: application of the March model
Journal of Applied Crystallography · 1986 · 1,643 citations
Rietveld refinement guidelines
Journal of Applied Crystallography · 1999 · 2,242 citations
Ferroelectricity in Simple Binary ZrO<sub>2</sub> and HfO<sub>2</sub>
Nano Letters · 2012 · 1,684 citations
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