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GaN-on-Si Power Technology: Devices and Applications

IEEE Transactions on Electron Devices · 2017 · Vol. 64(3) · pp. 779–795
Kevin J. ChenOliver D. HäberlenAlex LidowC. L. TsaiTetsuzo UedaYasuhiro UemotoYifeng Wu

Abstract

In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesReliability (semiconductor)MOSFETPower semiconductor devicePower electronicsPower MOSFETCommercializationElectrical engineeringElectronicsPower (physics)Gallium nitride
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Journal of Physics D Applied Physics · 2018 · 1,228 citations
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