articleTop 1% cited
Matching properties of MOS transistors
IEEE Journal of Solid-State Circuits · 1989 · Vol. 24(5) · pp. 1433–1439
Marcel Pelgrom✉(Philips (Finland))Aad C.J. Duinmaijer(Philips (Finland))A.P.G. Welbers(Philips (Netherlands))
Abstract
The matching properties of the threshold voltage, substrate factor, and current factor of MOS transistors have been analyzed and measured. Improvements to the existing theory are given, as well as extensions for long-distance matching and rotation of devices. Matching parameters of several processes are compared. The matching results have been verified by measurements and calculations on several basic circuits.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesAnalog and Mixed-Signal Circuit DesignMatching (statistics)TransistorRotation (mathematics)Computer scienceElectronic circuitSubstrate (aquarium)Integrated circuitElectronic engineeringVoltageElectrical engineering
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References
Characterisation and modeling of mismatch in MOS transistors for precision analog design
IEEE Journal of Solid-State Circuits · 1986 · 677 citations
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