articleTop 1% cited
Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In <sub>0.15</sub> Ga <sub>0.85</sub> As quantum well
Electronics Letters · 1999 · Vol. 35(14) · pp. 1163–1165
G.T. Liu✉(University of New Mexico)A. Stintz(University of New Mexico)H. Li(University of New Mexico)Kevin J. Malloy(University of New Mexico)L. F. Lester(University of New Mexico)
Abstract
The lowest room-temperature threshold current density, 26 A/cm2, of any semiconductor diode lasers is reported for a quantum dot device with a single InAs dot layer contained within a strained In0.15Ga0.85As quantum well. The lasers are epitaxially grown on a GaAs substrate, and the emission wavelength is 1.25 µm.
Semiconductor Quantum Structures and DevicesSemiconductor Lasers and Optical DevicesPhotonic and Optical DevicesOptoelectronicsMaterials scienceQuantum dotDiodeQuantum dot laserLaserCurrent densitySemiconductor laser theoryEpitaxySubstrate (aquarium)
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References
Multidimensional quantum well laser and temperature dependence of its threshold current
Applied Physics Letters · 1982 · 3,323 citations
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