articleTop 10% cited
Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
IEEE Photonics Technology Letters · 1999 · Vol. 11(12) · pp. 1527–1529
T.C. Newell✉(University of New Mexico)David Bossert(United States Air Force Research Laboratory)A. Stintz(University of New Mexico)B. Fuchs(University of New Mexico)Kevin J. Malloy(University of New Mexico)L. F. Lester(University of New Mexico)
Abstract
Amplified spontaneous emission measurements are investigated below threshold in InAs quantum-dot lasers emitting at 1.22 μm. The dot layer of the laser was grown in a strained quantum well (QW) on a GaAs substrate. Ground state gain is determined from cavity mode Fabry-Perot modulation. As the injection current increases, the gain rises super-linearly while changes in the index of refraction decrease. Below the onset of gain saturation, the linewidth enhancement factor is as small as 0.1, which is significantly lower than that reported for QW lasers.
Semiconductor Quantum Structures and DevicesSemiconductor Lasers and Optical DevicesPhotonic and Optical DevicesLaser linewidthQuantum dot laserOptoelectronicsQuantum dotMaterials scienceLaserSemiconductor laser theorySpontaneous emissionQuantum wellDiode
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280
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References
Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In <sub>0.15</sub> Ga <sub>0.85</sub> As quantum well
Electronics Letters · 1999 · 477 citations
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