articleTop 1% cited
Low-threshold oxide-confined 1.3-μm quantum-dot laser
IEEE Photonics Technology Letters · 2000 · Vol. 12(3) · pp. 230–232
Abstract
Data are presented on low threshold, 1.3-μm oxide-confined InGaAs-GaAs quantum dot lasers. A very low continuous-wave threshold current of 1.2 mA with a threshold current density of 28 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is achieved with p-up mounting at room temperature. For slightly larger devices the continuous-wave threshold current density is as low as 19 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
Semiconductor Quantum Structures and DevicesSemiconductor Lasers and Optical DevicesPhotonic and Optical DevicesContinuous waveLaserPhysicsQuantum dotOxideOptoelectronicsCurrent (fluid)Materials scienceOpticsThermodynamics
Citations
285
FWCI
26.51
field-weighted impact
References
14
Percentile
100%
vs. same field & year
Citations per year
References
Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In <sub>0.15</sub> Ga <sub>0.85</sub> As quantum well
Electronics Letters · 1999 · 477 citations
Citation Network
How this paper connects to the literature. Drag to explore, click any node to open that paper.