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Room-Temperature Ultraviolet Nanowire Nanolasers

Science · 2001 · Vol. 292(5523) · pp. 1897–1899
Michael H. HuangSamuel S. MaoH. FeickHaoquan YanYiying WuHannes KindEicke R. WeberRichard E. RussoPeidong Yang

Abstract

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.

Nanowire Synthesis and ApplicationsGa2O3 and related materialsZnO doping and propertiesNanowireLasing thresholdMaterials scienceOptoelectronicsUltravioletSapphireLaserNanolaserLaser linewidthSemiconductor
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References
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Japanese Journal of Applied Physics · 1996 · 2,483 citations
Optically pumped lasing of ZnO at room temperature
Applied Physics Letters · 1997 · 2,190 citations
Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport
Advanced Materials · 2001 · 2,693 citations
Blue-green laser diodes
Applied Physics Letters · 1991 · 1,629 citations
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