articleTop 10% cited
Probing Layer Number and Stacking Order of Few‐Layer Graphene by Raman Spectroscopy
Small · 2009 · Vol. 6(2) · pp. 195–200
Yufeng Hao(National University of Singapore)Yingying Wang(Nanyang Technological University)Lei Wang(National University of Singapore)Zhenhua Ni(Nanyang Technological University)Ziqian Wang(National University of Singapore)Rui Wang(National University of Singapore)Chee Keong Koo(National University of Singapore)Zexiang Shen(Nanyang Technological University)John T. L. Thong✉(National University of Singapore)
Abstract
Layer number and stacking order of few-layer graphene (FLG) are of particular interest since they directly determine the performance of graphene-based electronic devices. By analyzing Raman spectra and Raman images, quantitative indices are extracted to discriminate the thickness of AB-stacked FLG from single- to five-layer graphene; a few key spectral characteristics are also identified for FLG with misoriented stacking.
Graphene research and applications2D Materials and ApplicationsAdvancements in Battery MaterialsGrapheneStackingRaman spectroscopyMaterials scienceLayer (electronics)NanotechnologyOptoelectronicsOpticsNuclear magnetic resonancePhysics
MeSH terms
ElectronsGraphiteSpectrum Analysis, Raman
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767
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99%
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