article Open AccessTop 1% cited
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Nature Nanotechnology · 2008 · Vol. 3(4) · pp. 210–215
Anindya Das✉(Indian Institute of Science Bangalore)Simone Pisana(University of Cambridge)Banani Chakraborty(Indian Institute of Science Bangalore)S. Piscanec(University of Cambridge)Subhankar Saha(Indian Institute of Science Bangalore)Umesh V. Waghmare(Jawaharlal Nehru Centre for Advanced Scientific Research)Kostya S. Novoselov(University of Manchester)H. R. Krishnamurthy(Indian Institute of Science Bangalore)A. K. Geǐm(University of Manchester)Andrea C. Ferrari(University of Cambridge)Anil K. Sood(Indian Institute of Science Bangalore)
Graphene research and applicationsThermal properties of materialsDiamond and Carbon-based Materials ResearchGrapheneMaterials scienceDopingTransistorOptoelectronicsRaman spectroscopyDopantNanotechnologyRaman scatteringDebye length
MeSH terms
CarbonElectrochemistryMaterials TestingParticle SizeSpectrum Analysis, RamanTransistors, ElectronicEquipment Failure AnalysisNanotechnologyNanostructures
Funding
- Leverhulme Trust
Citations
3,538
FWCI
73.35
field-weighted impact
References
36
Percentile
100%
vs. same field & year
Citations per year
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References
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Nano Letters · 2007 · 2,490 citations
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Physical Review Letters · 2006 · 14,760 citations
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