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Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation

IEEE Transactions on Electron Devices · 1994 · Vol. 41(5) · pp. 761–767

K.F. Schuegraf✉(University of California, Berkeley)Chenming Hu(University of California, Berkeley)

Abstract

In this paper, we present a model for silicon dioxide breakdown characterization, valid for a thickness range between 25 /spl Aring/ and 130 /spl Aring/, which provides a method for predicting dielectric lifetime for reduced power supply voltages and aggressively scaled oxide thicknesses. This model, based on hole injection from the anode, accurately predicts Q/sub BD/ and t/sub BD/ behavior including a fluence in excess of 10/sup 7/ C/cm/sup 2/ at an oxide voltage of 2.4 V for a 25 /spl Aring/ oxide. Moreover, this model is a refinement of and fully complementary with the well known 1/E model, while offering the ability to predict oxide reliability for low voltages.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor TechnologiesExtrapolationOxideAnodeReliability (semiconductor)VoltageSiliconBreakdown voltageMaterials scienceElectrical engineeringDielectric

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