articleTop 1% cited
Ideal hydrogen termination of the Si (111) surface
Applied Physics Letters · 1990 · Vol. 56(7) · pp. 656–658
G. S. Higashi✉(AT&T (United States))Yves J. Chabal(Alcatel Lucent (Germany))Gary W. Trucks(Alcatel Lucent (Germany))Krishnan Raghavachari(Alcatel Lucent (Germany))
Abstract
Aqueous HF etching of silicon surfaces results in the removal of the surface oxide and leaves behind silicon surfaces terminated by atomic hydrogen. The effect of varying the solution pH on the surface structure is studied by measuring the SiH stretch vibrations with infrared absorption spectroscopy. Basic solutions ( pH=9–10) produce ideally terminated Si(111) surfaces with silicon monohydride ( 3/4 SiH) oriented normal to the surface. The surface is found to be very homogeneous with low defect density (<0.5%) and narrow vibrational linewidth (0.95 cm−1 ).
Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceAdvancements in Semiconductor Devices and Circuit DesignSiliconHydrogenEtching (microfabrication)Infrared spectroscopyInfraredAnalytical Chemistry (journal)Aqueous solutionMaterials scienceLaser linewidthOxide
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Cited by
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References
Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopy
Applied Physics A · 1986 · 411 citations
<i>Internal Reflection Spectroscopy</i>
Physics Today · 1968 · 1,728 citations
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