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Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition

Japanese Journal of Applied Physics · 1997 · Vol. 36(11A) · pp. L1453–L1453

Kazunori Minegishi✉(University of Yamanashi)Yasushi Koiwai Yasushi Koiwai(University of Yamanashi)Yukinobu Kikuchi Yukinobu Kikuchi(University of Yamanashi)Koji Yano(University of Yamanashi)Masanobu Kasuga(University of Yamanashi)Azuma Shimizu(University of Yamanashi)

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Abstract

The growth of p-type ZnO film was realized for the first time by the simultaneous addition of NH 3 in carrier hydrogen and excess Zn in source ZnO powder. The resistivity was typically 100 Ω·cm. A model showing nitrogen incorporation suggests the possibility of realizing p-type ZnO film of low resistivity by optimizing thermal annealing.

ZnO doping and properties Copper-based nanomaterials and applications Gas Sensing Nanomaterials and SensorsElectrical resistivity and conductivityZincAnnealing (glass)Chemical vapor depositionMaterials scienceNitrogenOxideHydrogenChemical engineeringInorganic chemistry

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p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping