articleTop 1% cited
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Nature Materials · 2004 · Vol. 4(1) · pp. 42–46
Atsushi Tsukazaki✉(Tohoku University)Akira Ohtomo(Tohoku University)Takeyoshi Onuma(University of Tsukuba)Makoto Ohtani(Tohoku University)T. Makino(RIKEN)Masatomo Sumiya(Shizuoka University)Keita Ohtani(Tohoku University)Shigefusa F. Chichibu(RIKEN)Syunrou Fuke(Shizuoka University)Y. Segawa(RIKEN)Hideo Ohno(Tohoku University)Hideomi Koinuma(Tokyo Institute of Technology)M. Kawasaki(Tohoku University)
ZnO doping and propertiesGa2O3 and related materialsGaN-based semiconductor devices and materialsMaterials scienceOptoelectronicsElectroluminescenceDopantEpitaxyLight-emitting diodeDopingDiodeLasing thresholdExciton
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References
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Solid State Communications · 1997 · 975 citations
Characterization of homoepitaxial <i>p</i>-type ZnO grown by molecular beam epitaxy
Applied Physics Letters · 2002 · 1,250 citations
P‐type doping and devices based on ZnO
physica status solidi (b) · 2004 · 524 citations
Synthesis of p-type ZnO films
Journal of Crystal Growth · 2000 · 466 citations
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
Applied Physics Letters · 1994 · 3,754 citations
Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition
Japanese Journal of Applied Physics · 1997 · 544 citations
Growth of ZnO Thin Film by Laser MBE: Lasing of Exciton at Room Temperature
physica status solidi (b) · 1997 · 278 citations
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