articleTop 1% cited
Electron traps in bulk and epitaxial GaAs crystals
Electronics Letters · 1977 · Vol. 13(7) · pp. 191–193
Abstract
Fifteen different electron traps have been characterised in v.p.e., l.p.e., m.b.e. and bulk-grown GaAs from d.l.t.s. experiments. An accurate description of each level is given, and allows a fruitful comparison with fragmentary previous data. A catalogue of these electron traps is provided as a working tool.
Electron and X-Ray Spectroscopy TechniquesChemical and Physical Properties of MaterialsSemiconductor Quantum Structures and DevicesEpitaxyElectronMaterials scienceCondensed matter physicsOptoelectronicsCrystallographyPhysicsChemistryNuclear physicsNanotechnology
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References
Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors
Applied Physics A · 1977 · 293 citations
Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
Physical review. B, Solid state · 1977 · 1,180 citations
Deep-level transient spectroscopy: A new method to characterize traps in semiconductors
Journal of Applied Physics · 1974 · 3,667 citations
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