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Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors
Applied Physics A · 1977 · Vol. 12(1) · pp. 45–53
H.W. Lefevre✉(Fraunhofer Institute for Applied Solid State Physics)Michael Schulz(Fraunhofer Institute for Applied Solid State Physics)
Silicon and Solar Cell TechnologiesSemiconductor materials and interfacesSilicon Carbide Semiconductor TechnologiesDeep-level transient spectroscopyMaterials scienceSchottky barrierCapacitanceDeep holeDiffusionSubstrate (aquarium)Diffusion capacitanceDepletion regionSemiconductor
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Electron traps in bulk and epitaxial GaAs crystals
Electronics Letters · 1977 · 730 citations
References
Statistics of the Recombinations of Holes and Electrons
Physical Review · 1952 · 6,327 citations
Deep impurities in semiconductors
Journal of Crystal Growth · 1974 · 785 citations
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