articleTop 1% cited
Excellent crystallinity of truly bulk ammonothermal GaN
Journal of Crystal Growth · 2008 · Vol. 310(17) · pp. 3911–3916
R. Dwiliński✉(Ammono (Poland))R. Doradziński(Ammono (Poland))J. Garczyński(Ammono (Poland))L. Sierzputowski(Ammono (Poland))A. Puchalski(Ammono (Poland))Y. Kanbara(Nichia Corporation (Japan))K. Yagi(Nichia Corporation (Japan))Hisashi Minakuchi(Nichia Corporation (Japan))Hiroaki Hayashi(Nichia Corporation (Japan))
GaN-based semiconductor devices and materialsGa2O3 and related materialsAcoustic Wave Resonator TechnologiesCrystallinityGallium nitrideMaterials scienceDiffractometerCrystal (programming language)NitrideDislocationRadius of curvatureCrystallographyCurvature
Funding
- European Commission
- European Regional Development Fund
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318
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17.78
field-weighted impact
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References
Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN
Journal of Crystal Growth · 1984 · 386 citations
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Excellent crystallinity of truly bulk ammonothermal GaN
Journal of Crystal Growth · 2008 · 318 citations
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