article
Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN
Journal of Crystal Growth · 1984 · Vol. 66(1) · pp. 1–10
J. Karpiński✉(Institute of High Pressure Physics)J. Jun(Institute of High Pressure Physics)S. Porowski(Institute of High Pressure Physics)
GaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materialsSolubilityNitrogen gasNitrogenThermodynamic equilibriumElectrical resistivity and conductivityEpitaxyChemistryGas pressureHigh pressureThermodynamics
Citations
386
FWCI
1.51
field-weighted impact
References
16
Percentile
82%
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Citations per year
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