articleTop 10% cited
Short-channel effect in fully depleted SOI MOSFETs
IEEE Transactions on Electron Devices · 1989 · Vol. 36(2) · pp. 399–402
K.K. Young✉(Massachusetts Institute of Technology)
Abstract
The short-channel effect in fully depleted silicon-on-insulator MOSFETs has been studied by a two-dimensional analytical model and by computer simulation. The calculated values agree well with the simulation results. It is found that the vertical field through the depleted film strongly influences the lateral field across the source and drain regions. The short-channel effect can be significantly reduced by decreasing the silicon film thickness.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignSilicon Carbide Semiconductor TechnologiesSilicon on insulatorChannel (broadcasting)SiliconMOSFETElectrical engineeringMaterials scienceField (mathematics)OptoelectronicsField-effect transistorElectronic engineering
Citations
903
FWCI
3.97
field-weighted impact
References
3
Percentile
93%
vs. same field & year
Citations per year
Cited by
Scaling the Si MOSFET: from bulk to SOI to bulk
IEEE Transactions on Electron Devices · 1992 · 888 citations
Citation Network
How this paper connects to the literature. Drag to explore, click any node to open that paper.